Microprocessor system for measuring sensor characteristics of gas-sensitive field-effect transistors based on porous silicon and reduced graphene oxide film

Abstract

Applied aspects of the use of new nanostructured materials in sensor electronics actualize a number of tasks related to the design of electrical circuits for connecting sensor elements, calibration of conversion characteristics, as well as the development of optimal methods for registering information signals and algorithms for their analysis. In particular, nanostructures of porous silicon and graphene demonstrate significant potential for application in sensor devices. A field-effect transistor, in which a reduced graphene oxide film deposited on the porous silicon surface serves as the conductive channel, is proposed as the sensitive element of the sensor. The significant surface area of the porous layer and the dependence of the conductivity of the reduced graphene oxide film on local changes in the electric field provide high sensitivity of the sensor to gas molecules. The action of microfields of adsorbed polar molecules significantly changes the value of the drift mobility of charge carriers and dispersion parameters, which causes a change in the capacitive and resistive characteristics of the field-effect transistor. The principles of constructing a measuring path of the sensor system using components of modern microelectronics and information technology are considered in the paper. The proposed algorithms for controlling information and measuring systems make it possible to implement traditional measurement methods at a qualitatively higher level and create new types of devices with operating principles that are fundamentally different from previous ideologies for building measuring systems